2N1175 Datasheet | Motorola Semiconductor

2N1413thru 2N1415 (GERMANIUM) 2Nl175 CASE 31(1) (TO-5) Base connected to case PNPgermaniumtransistorsfor general-purpose lowfrequency amplifier and switching applications. Characteristic curves similar to 2N524-2N527 series. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient Symbol VCB VCEO VEB IC Tj & Tstg Po Value 35 25 10 500 -65 to +100 225 Unit Vdc Vdc Vdc m Adc °C m W ELECTRICAL CHARACTERISTICS- (TA; 250 C unless otherwise noted) Characteristics Collector Cutoff Current VCB ; 30 Vdc, IE; 0 Emitter Cutoff Current VEB ; 10 Vdc, IC ; 0 Collector-Emitter Voltage IC; 0.6 m Ade, RBE = 10 K Punch-Thru Voltage DC Current Gain IC = 20 m Ade, VCE =1 Vdc 2N1413 2N1414 2N1415 2N1175 Symbol Min ICBO - l EBO - BVCER 25 Vpt 25 h FE 25 34 53 70 2-189 Max - - 42 65 90...