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2N1175 - PNP Transistor

Download the 2N1175 datasheet PDF. This datasheet also covers the 2N1413 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N1413-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 2N1175 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N1175. For precise diagrams, and layout, please refer to the original PDF.

2N1413thru 2N1415 (GERMANIUM) 2Nl175 CASE 31(1) (TO-5) Base connected to case PNPgermaniumtransistorsfor general-purpose lowfrequency amplifier and switching applications...

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sfor general-purpose lowfrequency amplifier and switching applications. Characteristic curves similar to 2N524-2N527 series. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient Symbol VCB VCEO VEB IC Tj & Tstg Po Value 35 25 10 500 -65 to +100 225 Unit Vdc Vdc Vdc mAdc °C mW ELECTRICAL CHARACTERISTICS· (TA; 250 C unless otherwise noted) Characteristics Collector Cutoff Current VCB ; 30 Vdc, IE; 0 Emitter Cutoff Current VEB ; 10 Vdc, IC ; 0 Collector-Emitter Voltage IC; 0.

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