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2N1175 - PNP Transistor

This page provides the datasheet information for the 2N1175, a member of the 2N1413 PNP Transistor family.

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Datasheet Details

Part number 2N1175
Manufacturer Motorola
File Size 90.17 KB
Description PNP Transistor
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2N1413thru 2N1415 (GERMANIUM) 2Nl175 CASE 31(1) (TO-5) Base connected to case PNPgermaniumtransistorsfor general-purpose lowfrequency amplifier and switching applications. Characteristic curves similar to 2N524-2N527 series. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient Symbol VCB VCEO VEB IC Tj & Tstg Po Value 35 25 10 500 -65 to +100 225 Unit Vdc Vdc Vdc mAdc °C mW ELECTRICAL CHARACTERISTICS· (TA; 250 C unless otherwise noted) Characteristics Collector Cutoff Current VCB ; 30 Vdc, IE; 0 Emitter Cutoff Current VEB ; 10 Vdc, IC ; 0 Collector-Emitter Voltage IC; 0.
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