Download 2N1190 Datasheet PDF
Motorola Semiconductor
2N1190
2N1190 is PNPgermanium transistors manufactured by Motorola Semiconductor.
- Part of the 2N1189 comparator family.
2Nl189 2Nl190(GERMANIUM) CASE31{l) ' (TO- 5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.- MAXIMUM RATINGS Rating Collector-Base Voltage Symbol Value Unit Vdc Collector-Emitter Voltage VCER Vdc Emitter-Base Voltage Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 m W1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) - Limited by pawerdissipation. IC TJ , Tstg PD 9JA ~C 500- - -65 to +100 200 0.375 0.250 m Ade °c m W °C/m W °C/m W ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted Characteristic Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0) (VCB= 10 Vdc, IE = 0, TA = + 7lo C) Symbol Min Tf P Mal Unit -...