2N1190 - PNPgermanium transistors

This page provides the datasheet information for the 2N1190, a member of the 2N1189 PNPgermanium transistors family.

Motorola

Datasheet Details

Part number	2N1190
Manufacturer	Motorola
File Size	140.24 KB
Description	PNPgermanium transistors
Datasheet	2N1190 Datasheet
Additional preview pages of the 2N1190 datasheet.

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Full PDF Text Transcription

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2Nl189 2Nl190(GERMANIUM) CASE31{l) ' (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol Value Unit VCB 45 Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) ·Limited by pawerdissipation. IC TJ , Tstg PD 9JA ~C 500*· -65 to +100 200 0.375 0.

Published: Nov 8, 2018 |