2N1191
2N1191 is PNPgermanium transistors manufactured by Motorola Semiconductor.
2N1191 thru 2N1194 (GERMANIUM)
All leads isolated
PNPgermanium transistors for high-gain audio amplifier and switching applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Storage and. Operating Temperature
Collector Dissipation in,Ambient (Derate 2.67 m Wr C above 25°C)
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction t() Case)
Symbol VCB VCER VEB
IC Tstg' TJ PD
9JA 9JC
Value 40 25 25 200
-65 to +100 200
0.375 0.250
Unit Vdc Vdc Vdc m Adc DC m W °C/m W °C/m W
ELECTRICAL CHARACTERISTICS = (TA 25°C unless otherwise noted)
Characteristic
Collector-Base Cutoff Current
(VCB = 25 V, IE = 0) (VCB = l.0 V, IE = 0)
Emitter-Base Cutoff C!rrent
(VEB '" 25 V, IC = 0)
Collector -Emitter Leakage Current (VCB '" 25 V, RBE '" 10 K)
Output Capacitance (VCE'" 6 V, IE'" l. 0 rn A)
Noise Figure
(VCE = 4.5 V, IE = 0.5 rn A, f = 1 k Hz,Rs = 100 ohms)
Small Signal Current Gain Cutoff Frequency
(VCB = 6 V, IE'" L(} rn A)
Symbol Min
ICBO
- l EBO
- ICER
- Cob
- NF
- Typ Max Unit
- 15 /l...
