This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N1195 |
|---|---|
| Datasheet | 2N1195 2N1141 Datasheet (PDF) |
| File Size | 278.03 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | PNP germanium mesa transistors |
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00 MHz Noise Figure Minimum BVclO @ VCE = -10Vdc.IE = lmAdc @Ic = -10011 Adc.IE = 0 Rs= 7SQ Minimum h,. f = 100MHz 35 Vdc 30Vdc 25 Vdc 4.0 db 4.5 db 5.0 db 12 db 10 db 8 db Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' (TA; 250 C unless otherwise noted) Cha racteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 /lAde, IE = 0) Emitter-Base Breakdown Voltage (IE.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N1190 | PNPgermanium transistors |
| 2N1191 | PNPgermanium transistors |
| 2N1192 | PNPgermanium transistors |
| 2N1193 | PNPgermanium transistors |
| 2N1194 | PNPgermanium transistors |
| 2N1100 | PNP germanium power transistors |
| 2N1120 | PNP germanium power transistor |
| 2N1131 | PNP SILICON ANNULAR TRANSISTORS |
| 2N1131A | PNP SILICON ANNULAR TRANSISTORS |
| 2N1132 | SWITCHING TRANSISTOR |
