| Part number | 2N1613 |
|---|---|
| Datasheet | 2N1613-Motorola.pdf |
| File Size | 36.44 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | GENERAL PURPOSE TRANSISTOR |
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Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) 0c = 100 mAdc, Rbe 10 Ohms) Collector-Base Breakdown Voltage (lc = 100 //Adc, Ie = 0) Emitter-Base Breakdown Voltage 0e = 100 ^Adc, lc = 0) Collector Cutoff Current (Vcb = 60 Vdc,.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N1613 | NPN medium power transistor | Philips |
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2N1613 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
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2N1613 | NPN Small Signal General Purpose Amplifiers | Fairchild |
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2N1613 | NPN LOW POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N1613 | NPN Low Power Silicon Transistor | VPT |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N1651 | PNP Transistor |
| 2N1652 | PNP Transistor |
| 2N1653 | PNP Transistor |
| 2N1692 | PNP Transistor |
| 2N1693 | PNP Transistor |
| 2N1008 | PNP germanium transistor |
| 2N1008A | PNP germanium transistor |
| 2N1008B | PNP germanium transistor |
| 2N1011 | PNP germanium power transistor |
| 2N1021 | PNP germanium powertransistorsfor |
