2N1613
Description
MAXIMUM RATINGS Rating Collector-Emitter Voltage (RBE * 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total D...
- Part: 2N1613
- Description: GENERAL PURPOSE TRANSISTOR
- Category: Transistor
- Manufacturer: Motorola Semiconductor
- Size: 36.44 KB
Datasheets by Manufacturer
- 2N1613 — Fairchild Semiconductor — NPN Small Signal General Purpose Amplifiers
- 2N1613 — Comset Semiconductor — Silicon Planar Epitaxial Transistors
- 2N1613 — Continental Device India — NPN SILICON PLANAR EPITAXIAL TRANSISTORS
- 2N1613 — VPT Components — NPN Low Power Silicon Transistor
- 2N1613 — Seme LAB — Bipolar NPN Device
- 2N1617 — Seme LAB — NPN SILICON TRANSISTOR