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2N1959 (SILICON)
CASE 31
(TO·S)
NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
RBE = 10 ohms
Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VCER
VCB VEB
Ie
Po
PD
TJ Tstg
Value
40
60 5 500 600 4,0 2.0 1.3 -65 to +175 -65 to +200
Unit
Vdc
Vdc Vdc mAdc mW mW/oC watts mW/oC °c °c
2-228
2N 1959 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25·C ",... othe...;...
2N1959 Datasheet
