2N1959
2N1959 is NPN Transistor manufactured by Motorola Semiconductor.
2N1959 (SILICON)
CASE 31
(TO- S)
NPN silicon annular transistor designed for highspeed, medium-power saturated switching applications.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
RBE = 10 ohms
Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VCER
VCB VEB
Ie
Po
TJ Tstg
Value
60 5 500 600 4,0 2.0 1.3 -65 to +175 -65 to +200
Unit
Vdc
Vdc Vdc m Adc m W m W/o C watts m W/o C °c °c
2-228
2N 1959 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25- C ",... othe...;...pee;""')
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Ie = 50 /l Ade, RBE = 10 ohms)
Collector-Base Breakdown Voltage
(IC = 100 /l Ade, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 /l Ade, IC = 0)
Collector Cutotf Current
(VCB = .30 Vdc, IE = 0)
0 l VCB = 30 Vdc, IE = 0, TA = 150 C)
ON CHARACTERISTICS...
