2N1982 Datasheet | Motorola Semiconductor

1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applications. MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol v CB VCEO VEB 2N1970 50 40 2N1980 30 20 2N1981 40 20 Collector Current Power Dissipation at TC = 250 C Junction Temperature Range IS 170 -65 to +110 ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted) Characteristic Symbol Min Collector- Base Cutoff Current (VCB = -100 Vdc) 2N1970 ICBO - (VCB =-50 Vdc) 2NI980 - (VCB ,-70Vdc) 2NI981 - (VCB = -90 Vdc) 2NI982 - (VCB = -2...