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2N2224 (SILICON)
NPN silicon annular transistor designed primarily for high speed switching applications.
CASE 31
(TO·S) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation @ TA = 25° C
Derate above 25°C
Total Device Dissipation @ T C = 25° C
Derate above 25° C Operating Junction Temperature Storage Temperature Range
Symbol
VCEO VCB VEB
IC PD
PD
TJ T stg
Value Unit
40
Vdc
65
Vdc
5.0
Vdc
0.5
Adc
0.8
W
5.33
mW;oC
3.0
Watts
20
mW;oC
+175
°c
-65 to +200 .,c
FIGURE 1
+12 Ydc 0-......-""""4710 11--...,..-...,..--1
10k
OY,--_
L -s.oy
-S.OVdc
2-262
~1o%---[-
I
s.
2N2224 Datasheet
