Download 2N2785 Datasheet PDF
Motorola Semiconductor
2N2785
2N2785 is DARLINGTON TRANSISTOR manufactured by Motorola Semiconductor.
CASE 20-03, STYLE 8 TO-72 (TO-206AF) DARLINGTON TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage (Base 1 and Base 2 open) Collector-Base Voltage Emitter-Base Voltage (Pin 4 to Pin 2) - Collector Current Continuous @ Total Device Dissipation T"a = 25°C Derate above 25°C @ Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE20 Value 40 Unit Vdc VCB10 VE2B10 ic Pd TJ. Tstg 60 15 7.5 200 0.5 2.9 1.8 10.5 ' - 65 to + 200 Vdc Vdc m Adc Watt m W/°C Watts m W/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage O) PC = 20 m Adc, Igi = 0) Collector-Base Breakdown Voltage Op = 100 MAdc, l£2 = 0) Emitter-Base Breakdown Voltage 0E2 = 100 ^Adc, Ic = 0) Collector Cutoff Current (Vqe = 20 Vdc, Ib = 0) Collector Cutoff Current (VC B1 = 30 Vdc, El = 0) ( VCB1 = 30 Vdc, Ie = 0, Ta 150°C) Emitter Cutoff Current (VE2B1 = 5.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current...