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2N2950 - NPN Transistor

Download the 2N2950 datasheet PDF. This datasheet also covers the 2N2949 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2949-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2949 (SILICON) 2N29S0 NPN silicon annular transistors for power amplifier and driver applications to 100 MHz. (TO·l07) 2N2949 2N2950 Collector connected to case; stud isolated from case MAXIMUM RATINGS- ~~ting Symbol Value Unit Collector- Base 'V()ltage Collector-Emitter Voltage Emitter - Base Voltage Collector Current (Continuous) Base Current (Continuous) RF Input Power (Nom) RF Output Power (Nom) Total Device Dissipation (2S0C Case temperature) (Derating Factor above 25°C) Total Device Dissipation at 25° Ambient (Derating Factor above 2S0C) VCB VCES VEB IC IB Pin Pout Po Po 60 60 3.0 0.7 100 1.0 S.O 6.0 40 2N2949 0.5 3.33 2N2950 0.7 4.