Motorola 2N2951
NPN Transistor
MAXIMUM RATINGS
. Rating Collector-Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (continuous) Base Current (continuous) Total Device Dissipation (25°C Case Temperature) (Derate above 25"C) Symbol VCB VCES VEB IC IB PD Value 60 60 5.0 250 50 2N2951 3.0 20 2N2952 1.8 12 Units Vdc Vdc Vdc mAdc mAdc Watts mW/"C Total Device Dissipation PD (25° C Ambient Temperature) 0.8 0.5 (Derate above 25°C) 5.33 3.33 mW/"C Junction Temperature Storage Temperature Range TJ -65 to 175 °c Tstg -65 to 175 °c● The maximum ratings as given for dc conditions can be exceeded on a pulse basis. See
ELECTRICAL CHARACTERISTICS
. 2-382 2N2951, 2N2952 (Continued)ELECTRICAL CHARACTERISTICS
(TA =2S0C unless otherwise notedI Characteristic Collector-Emitter Current Collector Cutoff Current Symbol ICES Conditions Min VCE = 60Vde, VBE = 0 -- -- VCE = 50Vde, VBE = 0, TC = 175°C Max Unit 100 /LAde 500 /LAde ICBO VOB = 50 Vde, ~ = 0 -- 0.1 /LAde Emitter Cutoff Current DC Current Gain lEBO hF...