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2N3211 (SILICON)
CASE 22
(TO-18)
NPN silicon high frequency switching transistor designed for high speed, saturated switching applications for industrial service.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector- Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA =25'c
Derate above 25 'c Total Device Dissipation @ TC = 25'C
Derate above 25'C
Operating & Storage Junction Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
Value
15 40 6.0 500 0.36 2.06 1.2 6.9
Unit
Vdc Vdc Vdc mAdc Watt mW/"C Watts mW/'C
TJ , Tstg -65 to +200
'c
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sreakdown Voltage
(IC =30 mAde, IS =0)
Collector-Base Sreakdown Voltage
(IC = 10 /lAde, IE =0)
(r.
2N3211 Datasheet
