Download 2N3211 Datasheet PDF
Motorola Semiconductor
2N3211
2N3211 is NPN silicon high frequency switching transistor manufactured by Motorola Semiconductor.
2N3211 (SILICON) CASE 22 (TO-18) NPN silicon high frequency switching transistor designed for high speed, saturated switching applications for industrial service. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector- Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA =25'c Derate above 25 'c Total Device Dissipation @ TC = 25'C Derate above 25'C Operating & Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD Value 15 40 6.0 500 0.36 2.06 1.2 6.9 Unit Vdc Vdc Vdc mAdc Watt mW/"C Watts mW/'C TJ , Tstg -65 to +200 'c ELECTRICAL CHARACTERISTICS (TA = 25- C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter...