2N3926 Description
2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO· 102) Collector electrically connected to case; = 25"C unless oth81Wise noted) I Characteristic Conditions I I I I I Symbol Min Typ Max Unit IIff CIIWCltllSTlCS CoUector-Emltter Sustaining Voltage f 11 CoUector-B..e Breakdown Voltage Emltter-Ba...