2N4066 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N4066 |
|---|---|
| Datasheet | 2N4066-Motorola.pdf |
| File Size | 114.37 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS |
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2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power. Gate-SOurce Voltage Forward Gate-50urce Voltage Drain Current Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation@Tc = 25°C Derate above 25°C Storage Temparature Range Operating Junction Temperature Range °lndlcatesJEDEC R8Qlotered D_. TimA...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N4067 | DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS |
| 2N4012 | NPN silicon annular transistor |
| 2N4015 | DUAL AMPLIFIER TRANSISTOR |
| 2N4016 | DUAL AMPLIFIER TRANSISTOR |
| 2N4026 | GENERAL PURPOSE TRANSISTOR |
| 2N4027 | GENERAL PURPOSE TRANSISTOR |
| 2N4028 | GENERAL PURPOSE TRANSISTOR |
| 2N4029 | GENERAL PURPOSE TRANSISTOR |
| 2N4030 | GENERAL PURPOSE TRANSISTOR |
| 2N4031 | GENERAL PURPOSE TRANSISTOR |
