Datasheet Summary
2N4066 (SILICON) 2N4067
DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS
Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power. chopper or switching applications_
DUAL P-CHANNEL MOS FIELD-EFFECT
TRANSISTORS
- High Forward Transadmittance IYfsl = 2_5 mmhos (Min) @VOS= -15 Vdc (2N4067)
- Low Forward Gate Current IG F = 2.5 pAdc (Max) @VGS = -25 Vdc
- Low Drain-Source "ON" Resistance rds(on) = 250 Ohms (Max)@VGS= -15 Vdc (2N4067)
- MAXIMUM RATINGS Rating
Drain-Source Voltage Drain-Gate Voltage R"".... Gate-SOurce Voltage Forward Gate-50urce Voltage Drain Current Total Device Dissipation@TA = 25°C
Derate above 25°C Total Device Dissipation@Tc = 25°C
Derate above 25°C...