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2N4231 thru 2N4.233 (SILICON)
Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.
CASE 80
(TO-66)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous.
Base Current Total Device Dissipation TC = 25° C
Derate above 25° C
Symbol
VCEO VCB VEB
IC'
IB
PD
2N4231 2N4232 2N4233 Unit
40
60
80
Vdc
50
70
90
Vdc
5.0
Vdc
3.0
Adc
5.0
1.0
Adc
35
Watts
0.2
W/·C
Operating & Storage Junction Temperature Range
TJ , Tstg
-55 to +200
·C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
* The 3.0 Amp maximum Ie valUe is based upon JEDEC current ~~.:rin requirements. The 5.