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2N4231 - Medium-power NPN silicon transistors

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2N4231 thru 2N4.233 (SILICON) Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. CASE 80 (TO-66) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous. Base Current Total Device Dissipation TC = 25° C Derate above 25° C Symbol VCEO VCB VEB IC' IB PD 2N4231 2N4232 2N4233 Unit 40 60 80 Vdc 50 70 90 Vdc 5.0 Vdc 3.0 Adc 5.0 1.0 Adc 35 Watts 0.2 W/·C Operating & Storage Junction Temperature Range TJ , Tstg -55 to +200 ·C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case * The 3.0 Amp maximum Ie valUe is based upon JEDEC current ~~.:rin requirements. The 5.