Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6338/D
High-Power NPN Silicon Transistors
. . . designed for use in industrial- military power amplifier and switching circuit applications.
- High Collector- Emitter Sustaining Voltage
- VCEO(sus) = 100 Vdc (Min)
- 2N6338 VCEO(sus) = 120 Vdc (Min)
- 2N6339 VCEO(sus) = 140 Vdc (Min)
- 2N6340 VCEO(sus) = 150 Vdc (Min)
- 2N6341
- High DC Current Gain
- hFE = 30
- 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
- Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...
