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2N6340 - NPN Transistor

Download the 2N6340 datasheet PDF. This datasheet also covers the 2N6338 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6338-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2N6341 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N6341 Silicon NPN Power Transistors SavantIC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6341 NPN Transistor
2N6304 HIGH FREQUENCY TRANSISTOR
2N6305 HIGH FREQUENCY TRANSISTOR
2N6338 NPN Transistor
2N6339 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.