2N996 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N996 |
|---|---|
| Datasheet | 2N996-Motorola.pdf |
| File Size | 78.34 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | PNPSILICON ANNULAR TRANSISTOR |
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2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applications. Collector-Emitter Sustaining Voltage - VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc Collector-Base Breakdown Voltage - BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc Emitter-Base Breakdown Voltage BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc PNPSILICON TRANSISTOR.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N995 | PNP silicon annular transistors |
| 2N998 | Darlington amplifier containing two NPN silicon annular transistors |
| 2N998 | DARLINGTON TRANSISTOR |
| 2N910 | NPN silicon annular transistors |
| 2N911 | NPN silicon annular transistors |
| 2N914 | SWITCHING TRANSISTOR |
| 2N915 | NPN silicon annular transistor |
| 2N916 | NPN silicon annular transistor |
| 2N918 | NPN SILICON ANNULAR TRANSISTORS |
| 2N929 | NPN silicon annular transistors |
