Datasheet Summary
2N996 (SILICON)
PNPSILICON ANNULAR TRANSISTOR
- .. designed for general-purpose amplifier applications.
- Collector-Emitter Sustaining Voltage
- VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc
- Collector-Base Breakdown Voltage
- BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc
- Emitter-Base Breakdown Voltage BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc
PNPSILICON TRANSISTOR
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- MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation@TA "" 2SoC Derate above 25°C
Total Device Dissipation @TC=: 25°C Derate above 2SoC
Operating and Storage Junction Temperature Range
- Indicates JEDEC Registered Data.
Svmbol VCEO VCB VEB
Po
Po
TJ.Tstg...