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2N998 - Darlington amplifier containing two NPN silicon annular transistors

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Part number 2N998
Manufacturer Motorola
File Size 76.77 KB
Description Darlington amplifier containing two NPN silicon annular transistors
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2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance. B, CASE 20(8) (TO·72) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCB VEB IC Po Po TJ Tstg 2N998 60 100 15 500 0.5 2.86 1.8 10.3 +200 -65 to +200 Unit Vdc Vdc Vdc mAdc watt mW/oC Watts mW/oC °c °c 2-146 2N998 (continued) ELECTRICAL CHARACTERISTICS CT. = 2O'C ..Ie.. oth....'.......
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