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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
•c
BCW67 BCW68
32 45 45 60
5.0
800
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device ADissipation, T = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
RflJA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350 2.8 150 357
Unit
mW
mW/°C
°C
°C/W
BCW67,A,B,C BCW68,F,G
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
BCW67 Datasheet
