BFQ17
CASE 345-01, STYLE 1
SOT-89 RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage (RBE =s 50 a)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Operating and Storage Junction Temperature Range
Symbol
vCEO VCER
Value 25 40
vCBO v EBO
•c
TJ. Tstg
40 2.0 300 -55 to +150
Unit
V V
V V
mA
°C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T/ = 25°C Derate above 25°C
Symbol PD
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R aJA
mm"Package mounted on 99.5% alumina 10 x 12 x 0.6
Max
1.0 8.0 150 125
Unit Watt
mW/°C
°C °C/W
ELECTRICAL CHARACTERISTICS
BFQ17 Datasheet
