MGP15N38CL Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features Gate- Emitter ESD protection, Gate Collector Over- Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. - Temperature pensated Gate - Collector Clamp Limits Stress Applied to Load - Integrated ESD Diode Protection - Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices - Low Saturation Voltage - High Pulsed Current Capability Order this document by MGP15N38CL/D 15 AMPERES N- CHANNEL IGBT VCE(on) = 1.8 V 380 VOLTS CLAMPED G GC CASE 221A- 09 STYLE 9 TO-...