MGP20N14CL Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N14CL/D Product Preview IGBT SMARTDISCRETES™ Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT).
MGP20N14CL Key Features
- Temperature pensated Gate-Drain Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
- Low Saturation Voltage
- High Pulsed Current Capability
- Continuous @ TC = 25°C Collector Current
- Single Pulsed (tp = 10 ms) Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 60 150 1.0
- 55 to 175 500 Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C mJ
- Junction to Case
- (TO-220) Thermal Resistance