MGP20N35CL Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT).
MGP20N35CL Key Features
- Temperature pensated Gate-Drain Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
- Low Saturation Voltage
- High Pulsed Current Capability
- Continuous @ TC = 25°C Reversed Collector Current
- pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5
- 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C
- Gate-Emitter Operating and Storage Temperature Range
- Junction to Case