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MGP20N35CL - SMARTDISCRETES Internally Clamped / N-Channel IGBT

Key Features

  • Gate.
  • Emitter ESD protection, Gate.
  • Collector overvoltage protection from.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.