MGW30N60 - Insulated Gate Bipolar Transistor

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Datasheet Details

Part number	MGW30N60
Manufacturer	Motorola
File Size	214.50 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MGW30N60 Datasheet
Additional preview pages of the MGW30N60 datasheet.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW30N60/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.

Published: Apr 27, 2005 |