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MHW5122A - 450 MHz CATV Amplifier

Key Features

  • ion.
  • implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system.
  • Specified for 53.
  • and 60.
  • Channel Performance.
  • Broadband Power Gain.
  • @ f = 40.
  • 450 MHz Gp = 12.5 dB (Typ).
  • Broadband Power Gain.
  • @ f = 40.
  • 450 MHz Gp = 12.5 dB (Typ).
  • Broadband Noise Figure.
  • @ f = 450 MHz NF = 7.0 dB (Typ).
  • Superior Gain, Return Loss and DC Current Stability with Temperatur.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MHW5172A 450 MHz CATV Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW5122A/D 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specified for use as a CATV trunk–line amplifier. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Specified for 53– and 60–Channel Performance • Broadband Power Gain — @ f = 40– 450 MHz Gp = 12.5 dB (Typ) • Broadband Power Gain — @ f = 40– 450 MHz Gp = 12.5 dB (Typ) • Broadband Noise Figure — @ f = 450 MHz NF = 7.0 dB (Typ) • Superior Gain, Return Loss and DC Current Stability with Temperature MHW5122A 12.