Datasheet4U Logo Datasheet4U.com

MHW5222 - 450 MHz CATV Amplifier

Key Features

  • ion.
  • implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system.
  • Broadband Power Gain  @ f = 40.
  • 450 MHz Gp = 22 dB (Typ).
  • Broadband Noise Figure  @ f = 40.
  • 450 MHz NF = 4.5 dB (Typ).
  • Superior Gain, Return Loss and DC Current Stability with Temperature.
  • All Gold Metallization.
  • 7.0 GHz Ion.
  • Implanted Transistors Order this document by MHW5222A/D MHW5222A 22 dB GAIN 450 MHz 60.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MHW10186N Gallium Arsenide CATV Amplifier Module Freescale Semiconductor
MHW10188AN Gallium Arsenide CATV Amplifier Module Freescale Semiconductor
MHW10236N Gallium Arsenide CATV Amplifier Module Freescale Semiconductor
MHW10247AN Gallium Arsenide CATV Amplifier Module Freescale Semiconductor
MHW10276N Gallium Arsenide CATV Amplifier Module Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MHW5222A 450 MHz CATV Amplifier
MHW5122A 450 MHz CATV Amplifier
MHW5172A 450 MHz CATV Amplifier
MHW5182A 450 MHz CATV Amplifier
MHW5185B High Ouput Doubler 450/550 MHz CATV Amplifier Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Broadband Power Gain  @ f = 40 – 450 MHz Gp = 22 dB (Typ) • Broadband Noise Figure  @ f = 40 – 450 MHz NF = 4.5 dB (Typ) • Superior Gain, Return Loss and DC Current Stability with Temperature • All Gold Metallization • 7.