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MHW5222A - 450 MHz CATV Amplifier

Key Features

  • ion.
  • implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system.
  • Broadband Power Gain  @ f = 40.
  • 450 MHz Gp = 22 dB (Typ).
  • Broadband Noise Figure  @ f = 40.
  • 450 MHz NF = 4.5 dB (Typ).
  • Superior Gain, Return Loss and DC Current Stability with Temperature.
  • All Gold Metallization.
  • 7.0 GHz Ion.
  • Implanted Transistors MHW5222A 22 dB GAIN 450 MHz 60.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MHW5222 450 MHz CATV Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW5222A/D 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. • Broadband Power Gain  @ f = 40 – 450 MHz Gp = 22 dB (Typ) • Broadband Noise Figure  @ f = 40 – 450 MHz NF = 4.5 dB (Typ) • Superior Gain, Return Loss and DC Current Stability with Temperature • All Gold Metallization • 7.