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MRF18060A - RF POWER FIELD EFFECT TRANSISTORS

Key Features

  • 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 2X K D bbb M T A M B M N (LID) R M (LID) ccc M H 3 T A M B M ccc aaa M T A T A M B B M (.

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📁 Similar Datasheet

Part Number Description Manufacturer
MRF18060ALR3 RF Power Field Effect Transistors Freescale Semiconductor
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MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor
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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18060ALSR3 RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3 RF POWER FIELD EFFECT TRANSISTORS
MRF18060ASR3 RF POWER FIELD EFFECT TRANSISTORS
MRF18060B RF Power Field Effect Transistors
MRF18060BLSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.