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MRF18060BSR3 - RF Power Field Effect Transistors

Download the MRF18060BSR3 datasheet PDF. This datasheet also covers the MRF18060BR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • PER ANSI Y14.5M.
  • 1994. 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF18060BR3_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.