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MRF18060BS - RF Power Field Effect Transistors

Download the MRF18060BS datasheet PDF. This datasheet also covers the MRF18060B variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF18060B-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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MRF18060ALR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor
MRF18030BLSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18060BSR3 RF Power Field Effect Transistors
MRF18060B RF Power Field Effect Transistors
MRF18060BLSR3 RF Power Field Effect Transistors
MRF18060BR3 RF Power Field Effect Transistors
MRF18060A RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1930 – 1990 MHz.