MRF18060BS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN- PCS/cellular radio and WLL applications. Specified for GSM1930
- 1990 MHz.
- GSM Performance, Full Frequency Band (1930
- 1990 MHz) Power Gain
- 13 d B (Typ) @ 60 Watts (CW) Efficiency
- 45% (Typ) @ 60 Watts (CW)
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
- Ease of Design for Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
- Excellent Thermal Stability
MRF18060B MRF18060BS
60 W, 1.90
- 1.99 GHz, 26 V LATERAL N- CHANNEL BROADBAND RF POWER...
