MRF18060B - RF Power Field Effect Transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF18060B
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	196.02 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF18060B Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF18060BLSR3	RF Power Field Effect Transistors
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MRF18060BS	RF Power Field Effect Transistors
MRF18060BSR3	RF Power Field Effect Transistors
MRF18060A	RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1930 – 1990 MHz.