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MRF18060BR3 - RF Power Field Effect Transistors

Key Features

  • PER ANSI Y14.5M.
  • 1994. 2.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18060B RF Power Field Effect Transistors
MRF18060BLSR3 RF Power Field Effect Transistors
MRF18060BS RF Power Field Effect Transistors
MRF18060BSR3 RF Power Field Effect Transistors
MRF18060A RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.