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MRF207
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@TC = 25°C(1)
Derate above 25°C
vCEO
18
Vdc
vCBO
36
Vdc
v EBO
4.0
Vdc
'C 0.4 Adc
PD 3.5 Watts 20 mW/°C
Storage Temperature
T stg
- 65 to + 200
°C
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
f
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.!
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, q = 0)
Collector-Base Breakdown Voltage (IC = 2.
MRF207 Datasheet
