| Part number | MRF21030R3 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 377.53 KB |
| Description | RF POWER FIELD EFFECT TRANSISTORS |
| Datasheet | MRF21030R3_Motorola.pdf |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF21030LR3 | RF Power Field Effect Transistors |
| MRF21030LSR3 | RF Power Field Effect Transistors |
| MRF21030SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21010LR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21045LR3 | RF Power Field Effect Transistors |
| MRF21045LSR3 | RF Power Field Effect Transistors |
| MRF21060R3 | RF Power Field Effect Transistors |
| MRF21060SR3 | RF Power Field Effect Transistors |
| MRF21085LSR3 | RF Power Field Effect Transistors |
