Datasheet4U Logo Datasheet4U.com

MRF21030R3 - RF POWER FIELD EFFECT TRANSISTORS

Key Features

  • .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21060LR3 RF Power Field Effect Transistors NXP
MRF21060LSR3 RF Power Field Effect Transistors NXP
MRF21120R6 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21030LR3 RF Power Field Effect Transistors
MRF21030LSR3 RF Power Field Effect Transistors
MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.