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MRF21030SR3 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF21030SR3, a member of the MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS family.

Datasheet Summary

Features

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Datasheet preview – MRF21030SR3

Datasheet Details

Part number MRF21030SR3
Manufacturer Motorola
File Size 377.53 KB
Description RF POWER FIELD EFFECT TRANSISTORS
Datasheet download datasheet MRF21030SR3 Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
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