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MRF21030LSR3 - RF Power Field Effect Transistors

Download the MRF21030LSR3 datasheet PDF. This datasheet also covers the MRF21030LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21030LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21060LR3 RF Power Field Effect Transistors NXP
MRF21060LSR3 RF Power Field Effect Transistors NXP
MRF21120R6 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21030LR3 RF Power Field Effect Transistors
MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS
MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.