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MRF21045LSR3 - RF Power Field Effect Transistors

Download the MRF21045LSR3 datasheet PDF. This datasheet also covers the MRF21045LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 mF Tantalum Chip Capacito

Key Features

  • 0 20 60 42 41 40 Figure 6. 2 - Carrier W - CDMA Broadband Performance.
  • 24 η.
  • 25.
  • 26 IMD 39 38 37 36 IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29.
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  • 32 VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21045LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21060LR3 RF Power Field Effect Transistors NXP
MRF21060LSR3 RF Power Field Effect Transistors NXP
MRF21120R6 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21045LR3 RF Power Field Effect Transistors
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21030LR3 RF Power Field Effect Transistors
MRF21030LSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg.