MRF21180R6 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MRF21180R6 |
|---|---|
| Datasheet | MRF21180R6_Motorola.pdf |
| File Size | 520.04 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF21120 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21010LR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030LR3 | RF Power Field Effect Transistors |
| MRF21030LSR3 | RF Power Field Effect Transistors |
| MRF21030R3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21030SR3 | RF POWER FIELD EFFECT TRANSISTORS |
