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MRF21180R6 - RF Power Field Effect Transistor

General Description

Short Ferrite Beads 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 µF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 1.0 µF Tantalum Capacitors 22 µF Tantalum Capacitors Type N Flange Mounts 10 Ω, 1/8 W Chip Resistors 1.0 kΩ, 1/8 W Chip Resistor Microstrip Microstrip Microstrip

Key Features

  • >.
  • 5 MHz, f2 = f + 5 MHz 2.
  • Carrier W.
  • CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF).
  • 45 f,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts (Avg.) Power Gain — 12.