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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF316/D
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 9.0 13.5 220 1.
MRF316 Datasheet
