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MRF373AR1 - RF Power Field Effect Transistors

General Description

18 pF Chip Capacitors, B Case, ATC 12 pF Chip Capacitor, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 51 pF Chip Capacitors, B Case, ATC 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) 15 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case,

Key Features

  • r product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P. O. Box 5405, Denver, Colorado 80217. 1.
  • 303.
  • 675.
  • 2140 or 1.
  • 800.
  • 441.
  • 2447 JAPAN: Motorola Japan Ltd. ; SPS, Tech.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF373ASR1 RF Power Field Effect Transistors
MRF373 The RF MOSFET Line RF Power Field Effect Transistors
MRF373R1 RF Power Field Effect Transistors
MRF373S The RF MOSFET Line RF Power Field Effect Transistors
MRF373SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.