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MRF373 - The RF MOSFET Line RF Power Field Effect Transistors

Key Features

  • RF373 MRF373S 7 Table 2. MRF373S Broadband Push.
  • Pull.

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📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF373AR1 RF Power Field Effect Transistors
MRF373ASR1 RF Power Field Effect Transistors
MRF373R1 RF Power Field Effect Transistors
MRF373S The RF MOSFET Line RF Power Field Effect Transistors
MRF373SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. Order this document by MRF373/D The RF MOSFET Line MRF373 MRF373S 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.