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MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET

Download the MRF5007R1 datasheet PDF. This datasheet also covers the MRF5007 variant, as both devices belong to the same n-channel broadband rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • thstand severely mismatched loads without suffering damage. MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5007_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5007 N-CHANNEL BROADBAND RF POWER FET
MRF5003 N-CHANNEL BROADBAND RF POWER FET
MRF5015 N-CHANNEL BROADBAND RF POWER FET
MRF5035 N-CHANNEL BROADBAND RF POWER FET
MRF511 HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5007/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt portable FM equipment. • Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.