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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF5035/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512 MHz, 12.5 Volt Output Power — 35 Watts Power Gain — 6.5 dB Min Efficiency — 50% Min • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 Load VSWR, @ 15.
MRF5035 Datasheet
