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MRF5015 Datasheet N-channel Broadband Rf Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband mercial and industrial.

Key Features

  • of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate.
  • to.
  • source threshold voltage, V GS(th). Gate Voltage Rating.
  • Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circu.

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