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MRF5015 - N-CHANNEL BROADBAND RF POWER FET

Key Features

  • of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate.
  • to.
  • source threshold voltage, V GS(th). Gate Voltage Rating.
  • Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512 MHz, 12.5 Volts Output Power — 15 Watts Power Gain — 10 dB Min Efficiency — 50% Min • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 VSWR, @ 15.