| Part number | MRF5P20180R6 |
|---|---|
| Datasheet | MRF5P20180R6_Motorola.pdf |
| File Size | 608.66 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF POWER FIELD EFFECT TRANSISTOR |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF5P21180 | N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5P21240R6 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF5003 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5007 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5007R1 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5015 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5035 | N-CHANNEL BROADBAND RF POWER FET |
| MRF511 | HIGH FREQUENCY TRANSISTOR |
| MRF515 | High Frequency Transistor |
| MRF517 | HIGH FREQUENCY TRANSISTOR |
