| Part number | MRF5P21180 |
|---|---|
| Datasheet | MRF5P21180_Motorola.pdf |
| File Size | 437.94 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | N-Channel Enhancement-Mode Lateral MOSFET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF5P21240R6 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P20180R6 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF5003 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5007 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5007R1 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5015 | N-CHANNEL BROADBAND RF POWER FET |
| MRF5035 | N-CHANNEL BROADBAND RF POWER FET |
| MRF511 | HIGH FREQUENCY TRANSISTOR |
| MRF515 | High Frequency Transistor |
| MRF517 | HIGH FREQUENCY TRANSISTOR |
