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MRF5S19090LR3 - N-CHANNEL RF POWER MOSFETs

General Description

Value, P/N or DWG 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark

Key Features

  • ale. com MRF5S19090LR3 MRF5S19090LSR3 5.

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📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S19090HR3 RF Power Field Effect Transistors Freescale Semiconductor
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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19090LSR3 N-CHANNEL RF POWER MOSFETs
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130SR3 N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5S19090LR3 RF Power Field Effect Transistors MRF5S19090LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier.