MRF9080 Datasheet PDF (RF POWER FIELD EFFECT TRANSISTORS)

MRF9080 - RF POWER FIELD EFFECT TRANSISTORS

Description

4.7 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 1.5 pF Chip Capacitor, B Case 5.6 pF Chip Capacitors, B Case 22 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors, B Case 0.8 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 1.0 kΩ, ???

Features

F9080SR3 MRF9080LSR3 9 NOTES www. datasheet4u. com MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10.

Datasheet Details

Part number	MRF9080
Manufacturer	Motorola
File Size	476.71 KB
Description	RF POWER FIELD EFFECT TRANSISTORS
Datasheet	MRF9080 Datasheet
Additional preview pages of the MRF9080 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datasheet4u.com of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.

Published: Jun 10, 2009 |