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MRF9080LR3 - RF Power Field Effect Transistors

Description

4.7 pF Chip Capacitor 2.7 pF Chip Capacitor 1.5 pF Chip Capacitor 5.6 pF Chip Capacitors 22 pF Chip Capacitors 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 0.8 pF Chip Capacitor 8.2 pF Chip Capacitor 1.0 kΩ, 1/8 W Chip Resistors (0805) Beryllium Copper Wear Blocks 30 mil Glass Teflon®,

Features

  • source Ω 0.91.
  • j2.11 0.88.
  • j2.65 1.6.
  • j2.61 2.45.
  • j3.38 Zload Ω 1.22.
  • j0.12 1.00.
  • j0.16 1.22.
  • j0.22 1.14.
  • j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and.

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Datasheet Details

Part number MRF9080LR3
Manufacturer Freescale Semiconductor
File Size 344.23 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF9080LR3 Datasheet
Additional preview pages of the MRF9080LR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
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