MRF9080LR3
MRF9080LR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
MRF9080 Rev. 5, 12/2004
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large
- signal, mon
- .. source amplifier applications in 26 volt base station equipment.
- Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55%
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase...
